Category |
Transistors-Bipolar-Bjt-Single |
Manufacturer |
Central Semiconductor Corp |
Series |
- |
Package |
Bulk |
RoHS |
RoHs |
Part Status |
Obsolete |
Power - Max |
200 mW |
Mounting Type |
Through Hole |
Package / Case |
TO-106-3 Domed |
Transistor Type |
NPN |
Operating Temperature |
-65°C ~ 150°C (TJ) |
Frequency - Transition |
350MHz |
Supplier Device Package |
TO-106 |
Vce Saturation (Max) @ Ib, Ic |
500mV @ 30mA, 300mA |
Current - Collector (Ic) (Max) |
200 mA |
Current - Collector Cutoff (Max) |
500nA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
30 @ 30mA, 400mV |
Voltage - Collector Emitter Breakdown (Max) |
15 V |