SHENZHEN GANGXINLI ELECTRONICS CO.,LTD

SHENZHEN GANGXINLI ELECTRONICS CO.,LTD

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2N4123

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2N4123

  • Part No: 2N4123
  • Manufacturer: NTE Electronics, Inc
  • In Stock: 18416
  • Description: T-NPN SI- GEN PUR AMP
  • Shipping Date: 2026/6/20
  • Datasheet: 2N4123 Datasheet
  • Category:Transistors-Bipolar-Bjt-Single
  • Lead-Time:Contact Our sales representative Email:sales@keepboomingtech.com
Category
Transistors-Bipolar-Bjt-Single
Manufacturer
NTE Electronics, Inc
Series
-
Package
Bag
RoHS
RoHs
Part Status
Active
Power - Max
350 mW
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Transistor Type
NPN
Operating Temperature
-55°C ~ 150°C (TJ)
Frequency - Transition
250MHz
Supplier Device Package
TO-92
Vce Saturation (Max) @ Ib, Ic
300mV @ 5mA, 50mA
Current - Collector (Ic) (Max)
200 mA
Current - Collector Cutoff (Max)
50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce
50 @ 2mA, 1V
Voltage - Collector Emitter Breakdown (Max)
30 V