Category |
Transistors-Bipolar-Bjt-Single |
Manufacturer |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
RoHS |
RoHs |
Part Status |
Active |
Power - Max |
1 W |
Mounting Type |
Through Hole |
Package / Case |
TO-237AA |
Transistor Type |
PNP |
Operating Temperature |
-65°C ~ 150°C (TJ) |
Frequency - Transition |
500MHz |
Supplier Device Package |
TO-237 |
Vce Saturation (Max) @ Ib, Ic |
500mV @ 10mA, 250mA |
Current - Collector (Ic) (Max) |
2 A |
Current - Collector Cutoff (Max) |
100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
80 @ 50mA, 1V |
Voltage - Collector Emitter Breakdown (Max) |
100 V |