Category |
Transistors-Igbts-Single |
Manufacturer |
Microchip Technology |
Series |
POWER MOS 7® |
Package |
Tube |
RoHS |
RoHs |
IGBT Type |
PT |
Input Type |
Standard |
Gate Charge |
150 nC |
Part Status |
Active |
Power - Max |
540 W |
Mounting Type |
Through Hole |
Package / Case |
TO-247-3 Variant |
Test Condition |
800V, 35A, 5Ohm, 15V |
Switching Energy |
1mJ (on), 1.185mJ (off) |
Td (on/off) @ 25°C |
14ns, 99ns |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Supplier Device Package |
T-MAX™ [B2] |
Vce(on) (Max) @ Vge, Ic |
3.9V @ 15V, 35A |
Reverse Recovery Time (trr) |
85 ns |
Current - Collector (Ic) (Max) |
96 A |
Current - Collector Pulsed (Icm) |
140 A |
Voltage - Collector Emitter Breakdown (Max) |
1200 V |