Category |
Transistors-Bipolar-Bjt-Single |
Manufacturer |
NXP USA Inc. |
Series |
- |
Package |
Bulk |
RoHS |
RoHs |
Part Status |
Obsolete |
Power - Max |
625 mW |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Transistor Type |
NPN - Darlington |
Operating Temperature |
150°C (TJ) |
Frequency - Transition |
155MHz |
Supplier Device Package |
TO-92-3 |
Vce Saturation (Max) @ Ib, Ic |
1.1V @ 200µA, 200mA |
Current - Collector (Ic) (Max) |
500 mA |
Current - Collector Cutoff (Max) |
50µA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
10000 @ 200mA, 5V |
Voltage - Collector Emitter Breakdown (Max) |
55 V |