Category |
Transistors-Bipolar-Bjt-Single |
Manufacturer |
NXP USA Inc. |
Series |
- |
Package |
Tape & Box (TB) |
RoHS |
RoHs |
Part Status |
Obsolete |
Power - Max |
830 mW |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Transistor Type |
NPN - Darlington |
Operating Temperature |
150°C (TJ) |
Frequency - Transition |
200MHz |
Supplier Device Package |
TO-92-3 |
Vce Saturation (Max) @ Ib, Ic |
1.8V @ 1mA, 1A |
Current - Collector (Ic) (Max) |
1 A |
Current - Collector Cutoff (Max) |
50nA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
2000 @ 500mA, 10V |
Voltage - Collector Emitter Breakdown (Max) |
45 V |