SHENZHEN GANGXINLI ELECTRONICS CO.,LTD

SHENZHEN GANGXINLI ELECTRONICS CO.,LTD

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GPA030A135MN-FDR

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be obtained from the product data sheet.

GPA030A135MN-FDR

  • Part No: GPA030A135MN-FDR
  • Manufacturer: SemiQ
  • In Stock: 10683
  • Description: IGBT 1350V 60A 329W TO3PN
  • Shipping Date: 2026/6/20
  • Datasheet: GPA030A135MN-FDR Datasheet
  • Category:Transistors-Igbts-Single
  • Lead-Time:Contact Our sales representative Email:sales@keepboomingtech.com
Category
Transistors-Igbts-Single
Manufacturer
SemiQ
Series
-
Package
Tube
RoHS
RoHs
IGBT Type
Trench Field Stop
Input Type
Standard
Gate Charge
300 nC
Part Status
Obsolete
Power - Max
329 W
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Test Condition
600V, 30A, 5Ohm, 15V
Switching Energy
4.4mJ (on), 1.18mJ (off)
Td (on/off) @ 25°C
30ns/145ns
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
TO-3PN
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 30A
Reverse Recovery Time (trr)
450 ns
Current - Collector (Ic) (Max)
60 A
Current - Collector Pulsed (Icm)
90 A
Voltage - Collector Emitter Breakdown (Max)
1350 V