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GT10J312(Q)

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GT10J312(Q)

  • Part No: GT10J312(Q)
  • Manufacturer: Toshiba Semiconductor and Storage
  • In Stock: 29923
  • Description: IGBT 600V 10A 60W TO220SM
  • Shipping Date: 2026/6/21
  • Datasheet: GT10J312(Q) Datasheet
  • Category:Transistors-Igbts-Single
  • Lead-Time:Contact Our sales representative Email:sales@keepboomingtech.com
Category
Transistors-Igbts-Single
Manufacturer
Toshiba Semiconductor and Storage
Series
-
Package
Tube
RoHS
RoHs
IGBT Type
-
Input Type
Standard
Gate Charge
-
Part Status
Obsolete
Power - Max
60 W
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Test Condition
300V, 10A, 100Ohm, 15V
Switching Energy
-
Td (on/off) @ 25°C
400ns/400ns
Operating Temperature
150°C (TJ)
Supplier Device Package
TO-220SM
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 10A
Reverse Recovery Time (trr)
200 ns
Current - Collector (Ic) (Max)
10 A
Current - Collector Pulsed (Icm)
20 A
Voltage - Collector Emitter Breakdown (Max)
600 V