Category |
Transistors-Igbts-Single |
Manufacturer |
Toshiba Semiconductor and Storage |
Series |
- |
Package |
Tray |
RoHS |
RoHs |
IGBT Type |
- |
Input Type |
Standard |
Gate Charge |
- |
Part Status |
Active |
Power - Max |
230 W |
Mounting Type |
Through Hole |
Package / Case |
TO-3P-3, SC-65-3 |
Test Condition |
300V, 30A, 24Ohm, 15V |
Switching Energy |
800µJ (on), 600µJ (off) |
Td (on/off) @ 25°C |
80ns/280ns |
Operating Temperature |
175°C (TJ) |
Supplier Device Package |
TO-3P(N) |
Vce(on) (Max) @ Vge, Ic |
2V @ 15V, 30A |
Reverse Recovery Time (trr) |
50 ns |
Current - Collector (Ic) (Max) |
59 A |
Current - Collector Pulsed (Icm) |
120 A |
Voltage - Collector Emitter Breakdown (Max) |
600 V |