Category |
Transistors-Igbts-Single |
Manufacturer |
Toshiba Semiconductor and Storage |
Series |
- |
Package |
Tube |
RoHS |
RoHs |
IGBT Type |
- |
Input Type |
Standard |
Gate Charge |
- |
Part Status |
Obsolete |
Power - Max |
240 W |
Mounting Type |
Through Hole |
Package / Case |
TO-3PL |
Test Condition |
300V, 50A, 13Ohm, 15V |
Switching Energy |
1.3mJ (on), 1.34mJ (off) |
Td (on/off) @ 25°C |
90ns/300ns |
Operating Temperature |
150°C (TJ) |
Supplier Device Package |
TO-3P(LH) |
Vce(on) (Max) @ Vge, Ic |
2.45V @ 15V, 50A |
Reverse Recovery Time (trr) |
- |
Current - Collector (Ic) (Max) |
50 A |
Current - Collector Pulsed (Icm) |
100 A |
Voltage - Collector Emitter Breakdown (Max) |
600 V |