Category |
Transistors-Igbts-Single |
Manufacturer |
Toshiba Semiconductor and Storage |
Series |
- |
Package |
Tube |
RoHS |
RoHs |
IGBT Type |
- |
Input Type |
Standard |
Gate Charge |
- |
Part Status |
Obsolete |
Power - Max |
170 W |
Mounting Type |
Through Hole |
Package / Case |
TO-3PL |
Test Condition |
- |
Switching Energy |
- |
Td (on/off) @ 25°C |
330ns/700ns |
Operating Temperature |
150°C (TJ) |
Supplier Device Package |
TO-3P(LH) |
Vce(on) (Max) @ Vge, Ic |
2.8V @ 15V, 60A |
Reverse Recovery Time (trr) |
2.5 µs |
Current - Collector (Ic) (Max) |
60 A |
Current - Collector Pulsed (Icm) |
120 A |
Voltage - Collector Emitter Breakdown (Max) |
1000 V |