SHENZHEN GANGXINLI ELECTRONICS CO.,LTD

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GT60N321(Q)

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GT60N321(Q)

  • Part No: GT60N321(Q)
  • Manufacturer: Toshiba Semiconductor and Storage
  • In Stock: 15804
  • Description: IGBT 1000V 60A 170W TO3P LH
  • Shipping Date: 2026/6/21
  • Datasheet: GT60N321(Q) Datasheet
  • Category:Transistors-Igbts-Single
  • Lead-Time:Contact Our sales representative Email:sales@keepboomingtech.com
Category
Transistors-Igbts-Single
Manufacturer
Toshiba Semiconductor and Storage
Series
-
Package
Tube
RoHS
RoHs
IGBT Type
-
Input Type
Standard
Gate Charge
-
Part Status
Obsolete
Power - Max
170 W
Mounting Type
Through Hole
Package / Case
TO-3PL
Test Condition
-
Switching Energy
-
Td (on/off) @ 25°C
330ns/700ns
Operating Temperature
150°C (TJ)
Supplier Device Package
TO-3P(LH)
Vce(on) (Max) @ Vge, Ic
2.8V @ 15V, 60A
Reverse Recovery Time (trr)
2.5 µs
Current - Collector (Ic) (Max)
60 A
Current - Collector Pulsed (Icm)
120 A
Voltage - Collector Emitter Breakdown (Max)
1000 V