SHENZHEN GANGXINLI ELECTRONICS CO.,LTD

SHENZHEN GANGXINLI ELECTRONICS CO.,LTD

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HGT1S10N120BNST

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HGT1S10N120BNST

  • Part No: HGT1S10N120BNST
  • Manufacturer: onsemi
  • In Stock: 14247
  • Description: IGBT 1200V 35A 298W TO263AB
  • Shipping Date: 2026/6/21
  • Datasheet: HGT1S10N120BNST Datasheet
  • Category:Transistors-Igbts-Single
  • Lead-Time:Contact Our sales representative Email:sales@keepboomingtech.com
Category
Transistors-Igbts-Single
Manufacturer
onsemi
Series
-
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
RoHS
RoHs
IGBT Type
NPT
Input Type
Standard
Gate Charge
100 nC
Part Status
Active
Power - Max
298 W
Mounting Type
Surface Mount
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Test Condition
960V, 10A, 10Ohm, 15V
Switching Energy
320µJ (on), 800µJ (off)
Td (on/off) @ 25°C
23ns/165ns
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
D²PAK (TO-263)
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 10A
Reverse Recovery Time (trr)
-
Current - Collector (Ic) (Max)
35 A
Current - Collector Pulsed (Icm)
80 A
Voltage - Collector Emitter Breakdown (Max)
1200 V