SHENZHEN GANGXINLI ELECTRONICS CO.,LTD

SHENZHEN GANGXINLI ELECTRONICS CO.,LTD

 Professional Electronic Component Distributor!

Language
HGTP2N120CN

Image shown is a representation only. Exact specifications should
be obtained from the product data sheet.

HGTP2N120CN

  • Part No: HGTP2N120CN
  • Manufacturer: onsemi
  • In Stock: 31841
  • Description: IGBT 1200V 13A 104W TO220AB
  • Shipping Date: 2026/6/21
  • Datasheet: HGTP2N120CN Datasheet
  • Category:Transistors-Igbts-Single
  • Lead-Time:Contact Our sales representative Email:sales@keepboomingtech.com
Category
Transistors-Igbts-Single
Manufacturer
onsemi
Series
-
Package
Tube
RoHS
RoHs
IGBT Type
NPT
Input Type
Standard
Gate Charge
30 nC
Part Status
Obsolete
Power - Max
104 W
Mounting Type
Through Hole
Package / Case
TO-220-3
Test Condition
960V, 2.6A, 51Ohm, 15V
Switching Energy
96µJ (on), 355µJ (off)
Td (on/off) @ 25°C
25ns/205ns
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
TO-220-3
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 2.6A
Reverse Recovery Time (trr)
-
Current - Collector (Ic) (Max)
13 A
Current - Collector Pulsed (Icm)
20 A
Voltage - Collector Emitter Breakdown (Max)
1200 V