SHENZHEN GANGXINLI ELECTRONICS CO.,LTD

SHENZHEN GANGXINLI ELECTRONICS CO.,LTD

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HGTP5N120BND

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HGTP5N120BND

  • Part No: HGTP5N120BND
  • Manufacturer: onsemi
  • In Stock: 18026
  • Description: IGBT 1200V 21A 167W TO220AB
  • Shipping Date: 2026/6/20
  • Datasheet: HGTP5N120BND Datasheet
  • Category:Transistors-Igbts-Single
  • Lead-Time:Contact Our sales representative Email:sales@keepboomingtech.com
Category
Transistors-Igbts-Single
Manufacturer
onsemi
Series
-
Package
Tube
RoHS
RoHs
IGBT Type
NPT
Input Type
Standard
Gate Charge
53 nC
Part Status
Not For New Designs
Power - Max
167 W
Mounting Type
Through Hole
Package / Case
TO-220-3
Test Condition
960V, 5A, 25Ohm, 15V
Switching Energy
450µJ (on), 390µJ (off)
Td (on/off) @ 25°C
22ns/160ns
Operating Temperature
-55°C ~ 150°C (TJ)
Supplier Device Package
TO-220-3
Vce(on) (Max) @ Vge, Ic
2.7V @ 15V, 5A
Reverse Recovery Time (trr)
65 ns
Current - Collector (Ic) (Max)
21 A
Current - Collector Pulsed (Icm)
40 A
Voltage - Collector Emitter Breakdown (Max)
1200 V