SHENZHEN GANGXINLI ELECTRONICS CO.,LTD

SHENZHEN GANGXINLI ELECTRONICS CO.,LTD

 Professional Electronic Component Distributor!

Language
HSG1002VE-TL-E

Image shown is a representation only. Exact specifications should
be obtained from the product data sheet.

HSG1002VE-TL-E

  • Part No: HSG1002VE-TL-E
  • Manufacturer: Rochester Electronics, LLC
  • In Stock: 29773
  • Description: RF 0.035A C BAND GERMANIUM NPN
  • Shipping Date: 2026/6/20
  • Datasheet: HSG1002VE-TL-E Datasheet
  • Category:Transistors-Bipolar-Bjt-Rf
  • Lead-Time:Contact Our sales representative Email:sales@keepboomingtech.com
Category
Transistors-Bipolar-Bjt-Rf
Manufacturer
Rochester Electronics, LLC
Series
-
Package
Bulk
RoHS
RoHs
Gain
8dB ~ 19.5dB
Part Status
Active
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
4-SMD, Gull Wing
Transistor Type
NPN
Operating Temperature
-
Frequency - Transition
38GHz
Supplier Device Package
4-MFPAK
Noise Figure (dB Typ @ f)
0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
Current - Collector (Ic) (Max)
35mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 5mA, 2V
Voltage - Collector Emitter Breakdown (Max)
3.5V