SHENZHEN GANGXINLI ELECTRONICS CO.,LTD

SHENZHEN GANGXINLI ELECTRONICS CO.,LTD

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MJD112-1G

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MJD112-1G

  • Part No: MJD112-1G
  • Manufacturer: onsemi
  • In Stock: 19232
  • Description: TRANS NPN DARL 100V 2A IPAK
  • Shipping Date: 2026/6/21
  • Datasheet: MJD112-1G Datasheet
  • Category:Transistors-Bipolar-Bjt-Single
  • Lead-Time:Contact Our sales representative Email:sales@keepboomingtech.com
Category
Transistors-Bipolar-Bjt-Single
Manufacturer
onsemi
Series
-
Package
Tube
RoHS
RoHs
Part Status
Active
Power - Max
1.75 W
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Transistor Type
NPN - Darlington
Operating Temperature
-65°C ~ 150°C (TJ)
Frequency - Transition
25MHz
Supplier Device Package
I-PAK
Vce Saturation (Max) @ Ib, Ic
3V @ 40mA, 4A
Current - Collector (Ic) (Max)
2 A
Current - Collector Cutoff (Max)
20µA
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 2A, 3V
Voltage - Collector Emitter Breakdown (Max)
100 V