Category |
Transistors-Bipolar-Bjt-Single |
Manufacturer |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
RoHS |
RoHs |
Part Status |
Active |
Power - Max |
650 mW |
Mounting Type |
Through Hole |
Package / Case |
TO-1-3 Metal Can |
Transistor Type |
PNP |
Operating Temperature |
90°C (TJ) |
Frequency - Transition |
- |
Supplier Device Package |
TO-1 |
Vce Saturation (Max) @ Ib, Ic |
170mV @ 50mA, 500mA |
Current - Collector (Ic) (Max) |
1 A |
Current - Collector Cutoff (Max) |
25µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
69 @ 300mA, 0V |
Voltage - Collector Emitter Breakdown (Max) |
- |