Category |
Transistors-Bipolar-Bjt-Single |
Manufacturer |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
RoHS |
RoHs |
Part Status |
Active |
Power - Max |
600 mW |
Mounting Type |
Through Hole |
Package / Case |
3-SIP |
Transistor Type |
NPN |
Operating Temperature |
150°C (TJ) |
Frequency - Transition |
500MHz |
Supplier Device Package |
3-SIP |
Vce Saturation (Max) @ Ib, Ic |
500mV @ 2mA, 20mA |
Current - Collector (Ic) (Max) |
50 mA |
Current - Collector Cutoff (Max) |
10µA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
20 @ 10mA, 10V |
Voltage - Collector Emitter Breakdown (Max) |
35 V |