Category |
Transistors-Bipolar-Bjt-Single |
Manufacturer |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
RoHS |
RoHs |
Part Status |
Active |
Power - Max |
400 mW |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
Transistor Type |
NPN - Darlington |
Operating Temperature |
-65°C ~ 125°C (TJ) |
Frequency - Transition |
60MHz |
Supplier Device Package |
TO-92 |
Vce Saturation (Max) @ Ib, Ic |
1.4V @ 200µA, 200mA |
Current - Collector (Ic) (Max) |
300 mA |
Current - Collector Cutoff (Max) |
100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
20000 @ 100mA, 5V |
Voltage - Collector Emitter Breakdown (Max) |
40 V |