Category |
Transistors-Bipolar-Bjt-Single |
Manufacturer |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
RoHS |
RoHs |
Part Status |
Active |
Power - Max |
125 W |
Mounting Type |
Through Hole |
Package / Case |
TO-218-3 |
Transistor Type |
NPN |
Operating Temperature |
-65°C ~ 150°C (TJ) |
Frequency - Transition |
7MHz |
Supplier Device Package |
TO-218 |
Vce Saturation (Max) @ Ib, Ic |
1V @ 2A, 4.5A |
Current - Collector (Ic) (Max) |
8 A |
Current - Collector Cutoff (Max) |
100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
2.25 @ 4.5A, 5V |
Voltage - Collector Emitter Breakdown (Max) |
700 V |