Category |
Transistors-Bipolar-Bjt-Single |
Manufacturer |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
RoHS |
RoHs |
Part Status |
Active |
Power - Max |
750 mW |
Mounting Type |
Through Hole |
Package / Case |
14-DIP (0.300", 7.62mm) |
Transistor Type |
NPN |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Frequency - Transition |
80MHz |
Supplier Device Package |
14-DIP |
Vce Saturation (Max) @ Ib, Ic |
500mV @ 2mA, 20mA |
Current - Collector (Ic) (Max) |
500 mA |
Current - Collector Cutoff (Max) |
100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
40 @ 30mA, 10V |
Voltage - Collector Emitter Breakdown (Max) |
200 V |