Category |
Transistors-Bipolar-Bjt-Single |
Manufacturer |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
RoHS |
RoHs |
Part Status |
Active |
Power - Max |
120 W |
Mounting Type |
Through Hole |
Package / Case |
TO-3P-3, SC-65-3 |
Transistor Type |
NPN - Darlington |
Operating Temperature |
150°C (TJ) |
Frequency - Transition |
- |
Supplier Device Package |
TO-3P |
Vce Saturation (Max) @ Ib, Ic |
1.8V @ 24mA, 12A |
Current - Collector (Ic) (Max) |
25 A |
Current - Collector Cutoff (Max) |
10µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
2000 @ 12A, 4V |
Voltage - Collector Emitter Breakdown (Max) |
120 V |