Category |
Transistors-Bipolar-Bjt-Single |
Manufacturer |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
RoHS |
RoHs |
Part Status |
Active |
Power - Max |
150 W |
Mounting Type |
Through Hole |
Package / Case |
TO-218-3 |
Transistor Type |
NPN - Darlington |
Operating Temperature |
175°C (TJ) |
Frequency - Transition |
- |
Supplier Device Package |
TO-218 |
Vce Saturation (Max) @ Ib, Ic |
5V @ 5.6A, 28A |
Current - Collector (Ic) (Max) |
28 A |
Current - Collector Cutoff (Max) |
1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
30 @ 10A, 5V |
Voltage - Collector Emitter Breakdown (Max) |
400 V |