Category |
Transistors-Bipolar-Bjt-Single |
Manufacturer |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
RoHS |
RoHs |
Part Status |
Active |
Power - Max |
50 W |
Mounting Type |
Through Hole |
Package / Case |
TO-213AA, TO-66-2 |
Transistor Type |
PNP - Darlington |
Operating Temperature |
-65°C ~ 200°C (TJ) |
Frequency - Transition |
- |
Supplier Device Package |
TO-66 |
Vce Saturation (Max) @ Ib, Ic |
3V @ 40mA, 4A |
Current - Collector (Ic) (Max) |
4 A |
Current - Collector Cutoff (Max) |
500µA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
750 @ 2A, 3V |
Voltage - Collector Emitter Breakdown (Max) |
80 V |