Category |
Transistors-Bipolar-Bjt-Single |
Manufacturer |
NTE Electronics, Inc |
Series |
- |
Package |
Bag |
RoHS |
RoHs |
Part Status |
Active |
Power - Max |
200 W |
Mounting Type |
Through Hole |
Package / Case |
3-SIP |
Transistor Type |
NPN |
Operating Temperature |
150°C (TJ) |
Frequency - Transition |
20MHz |
Supplier Device Package |
3-SIP |
Vce Saturation (Max) @ Ib, Ic |
2.5V @ 1A, 10A |
Current - Collector (Ic) (Max) |
17 A |
Current - Collector Cutoff (Max) |
100µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
20 @ 8A, 4V |
Voltage - Collector Emitter Breakdown (Max) |
200 V |