SHENZHEN GANGXINLI ELECTRONICS CO.,LTD

SHENZHEN GANGXINLI ELECTRONICS CO.,LTD

 Professional Electronic Component Distributor!

Language
SIZF916DT-T1-GE3

Image shown is a representation only. Exact specifications should
be obtained from the product data sheet.

SIZF916DT-T1-GE3

  • Part No: SIZF916DT-T1-GE3
  • Manufacturer: Vishay Siliconix
  • In Stock: 28346
  • Description: MOSFET N-CH DUAL 30V
  • Shipping Date: 2026/6/24
  • Datasheet: SIZF916DT-T1-GE3 Datasheet
  • Category:Transistors-Fets-Mosfets-Arrays
  • Lead-Time:Contact Our sales representative Email:sales@keepboomingtech.com
Category
Transistors-Fets-Mosfets-Arrays
Manufacturer
Vishay Siliconix
Series
TrenchFET® Gen IV
Package
Tape & Reel (TR),Cut Tape (CT),Digi-Reel®
RoHS
RoHs
FET Type
2 N-Channel (Dual)
FET Feature
Standard
Part Status
Active
Power - Max
3.4W (Ta), 26.6W (Tc), 4W (Ta), 60W (Tc)
Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Vgs(th) (Max) @ Id
2.4V @ 250µA, 2.2V @ 250µA
Operating Temperature
-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs
4mOhm @ 10A, 10V, 1.25mOhm @ 10A, 10V
Supplier Device Package
8-PowerPair® (6x5)
Gate Charge (Qg) (Max) @ Vgs
22nC @ 10V, 95nC @ 10V
Drain to Source Voltage (Vdss)
30V
Input Capacitance (Ciss) (Max) @ Vds
1060pF @ 15V, 4320pF @ 15V
Current - Continuous Drain (Id) @ 25°C
23A (Ta), 40A (Tc)