Parameter Characteristics, Applications and Alternative Models of CLA50E1200HB Silicon Carbide (SiC) Power Module
Product Overview
The CLA50E1200HB is a high-speed, high-temperature resistant power rectifier module based on silicon carbide (SiC) technology, with a rated reverse withstand voltage of 1200V and a forward current as high as 50A. It is widely used in high-performance inverters, power rectification systems, electric vehicle charging piles, industrial frequency converters and other occasions with extremely high requirements for power density and efficiency. Due to the high breakdown electric field, high thermal conductivity and faster reverse recovery capability of SiC material, compared with traditional silicon devices, CLA50E1200HB is more suitable for high switching frequencies and harsh working environments.
Core parameter specification
Project Parameter description
Model CLA50E1200HB
Packaging form: Power module packaging (HB type)
Polar type diode (double-tube common cathode structure)
Diode material: SiC (silicon carbide)
Maximum reverse voltage V<sub>RRM</sub> 1200V
The average forward current I<sub>F(AV)</sub> 50A
Peak surge current I<sub>FSM</sub> 200A (10ms sine wave)
The forward voltage drop V < sub > F < / sub > 1.5 V (@ 25 ° C, I < sub > F < / sub > = 50 a)
Reverse recovery time t<sub>rr</sub> <30ns (typical)
The working junction temperature range is -40°C to +175°C
Insulation withstand voltage (enclosure - pins) ≥ 2500 Vrms
The metal base plate of the packaging heat dissipation structure for heat conduction and the module installation holes
Product feature advantages
⚡ Ultra-fast recovery feature
With a reverse recovery time of less than 30ns, it significantly reduces switching losses and EMI, making it suitable for high-frequency applications
🌡️ High temperature reliability
The working junction temperature can reach up to 175°C, making it suitable for demanding industrial and automotive electrical systems
💡 Low forward voltage drop
Reduce power loss, improve rectification efficiency, and be suitable for high-power DC/DC or AC/DC conversion
🧱 Standard power module package
It is easy to be combined with IGBT modules or silicon carbide MOSFETs to build a complete PFC or inverter solution
Typical application scenarios
Application direction and application description
🔋 Electric vehicle charging pile high voltage rectifier unit, PFC module to achieve high efficiency conversion
🌀 Industrial inverters for diode circuits driven by high frequency PWM
🔧 Solar inverter Boost/Buck cascade topology rectifier element
⚙️ Motor control system suppress inductive feedback, construct free wheel diode loop
🔌 High frequency power module DC/DC power isolation conversion and bridge rectifier system
Alternative models and compatible product recommendations
Model and brand differences or recommendation reasons
C5D50065D Wolfspeed SiC diode, 600V / 50A, single tube package
FFH50UP120S onsemi 1200V 50A single tube, TO-247 package
LSIC2SD120B12CC Littelfuse dual SiC diode common cathode package module
VS-50WQ12FNTR Vishay fast recovery rectifier module, suitable for industrial rectification scenarios
Summary
CLA50E1200HB, as a 1200V/50A high-speed diode module based on SiC technology, features extremely fast recovery speed, low power consumption and excellent thermal stability. It is an ideal solution for current medium and high power industrial equipment, renewable energy systems, electric vehicle infrastructure and other fields with increasingly high requirements for efficiency and volume. For designers, its modular structure is convenient for deployment. The internal structure is adapted to the common cathode topology and compatible with the driving logic of IGBT or SiC MOSFET, and has extremely high system integration value.
