SHENZHEN GANGXINLI ELECTRONICS CO.,LTD
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SHENZHEN GANGXINLI ELECTRONICS CO.,LTD
Professional Electronic Component Distributor!
2025/9/18
The SSM5H08TU is a single MOSFET belonging to the discrete semiconductor products category, developed by Toshiba Semiconductor and Storage under the U-MOSIII series. It integrates a metal oxide MOSFET structure with an isolated Schottky diode, designed to deliver efficient switching performance for low-voltage electronic circuits. With an active part status, it ensures stable supply for industrial and consumer electronics applications.
Category:Discrete Semiconductor Products,Transistors,FETs, MOSFETs,Single FETs, MOSFETs
Mfr:Toshiba Semiconductor and Storage
Series:U-MOSIII
Packaging:Tape & Reel
Part Status:Active
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:1.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4V
Rds On (Max) @ Id, Vgs:160mOhm @ 750mA, 4V
Vgs(th) (Max) @ Id:1.1V @ 100µA
Input Capacitance (Ciss) (Max) @ Vds:125 pF @ 10 V
FET Feature:Schottky Diode (Isolated)
Operating Temperature:150°C
Mounting Type:Surface Mount
Package / Case:6-SMD (5 Leads), Flat Leads
Low On-Resistance:Boasts a maximum Rds On of 160mOhm at 750mA and 4V drive voltage, minimizing power loss during conduction and enhancing circuit efficiency.
Integrated Isolated Schottky Diode:The built-in Schottky diode simplifies circuit design by eliminating the need for an external freewheeling diode, suitable for switching applications.
Low Drive Voltage Requirement:Supports drive voltages of 2.5V and 4V, compatible with low-voltage control systems and reducing the complexity of drive circuits.
Compact Surface-Mount Package:Features a 6-SMD (5 Leads) flat-lead package, enabling space-saving installation and compatibility with automated assembly processes, paired with tape & reel packaging for high-volume production.
Low Threshold Voltage:With a maximum gate-source threshold voltage (Vgs(th)) of 1.1V @ 100µA, it allows for easy activation by low-voltage control signals.
Portable Medical Equipment:Applied in low-power medical devices such as portable oxygen concentrators and blood pressure monitors to regulate power supply and ensure efficient energy use.
Industrial Control Systems:Utilized in small-scale PLCs (Programmable Logic Controllers) and sensor modules for signal switching and low-voltage power distribution, benefiting from its high temperature tolerance.
Automotive Electronics (Low-Voltage Circuits):Integrated into automotive infotainment systems and interior lighting controls, where its isolated Schottky diode enhances switching stability.
IoT Devices:Employed in smart home sensors (e.g., temperature/humidity sensors) and wireless modules for power management, thanks to its low drive voltage and low power loss.
In summary, the SSM5H08TU single MOSFET from Toshiba’s U-MOSIII series combines low on-resistance, integrated diode functionality, and compact design. With its active supply status and adaptability to low-voltage systems, it serves as a reliable and efficient component for power management and switching in consumer, industrial, and medical electronics, offering strong practical value in discrete semiconductor applications.