2026/1/26
PSMN2R3-100SSEJ is a high-performance N-Channel MOSFET by Nexperia, featuring low on-resistance,high drain current, and a wide temperature range.It is optimized for high-efficiency,high-reliability power switching in an SOT-1235 surface-mount package.
Category:Discrete Semiconductor Products,Transistors,FETs, MOSFETs,Single FETs,MOSFETs
Mfr:Nexperia USA Inc.
Packaging:Tape & Reel
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:255A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:160 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:17200 pF @ 50 V
Power Dissipation (Max):341W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:SOT-1235
Low on-resistance:Features ultra-low Rds On of 2.2mOhm at 25A and 10V, effectively minimizing I²R conduction losses and improving power conversion efficiency.
Optimized SOA:Fully optimized safe operating area ensures superior linear mode operation and strong resistance to inrush current during startup.
High current capacity:Supports a continuous drain current of 255A at 25°C, meeting the demand for large current in high-power applications.
Wide temperature range:Operates stably in the temperature range of -55°C to 175°C, adapting to various harsh working environments.
High reliability:Adopts high-reliability copper-clip SOT-1235 (LFPAK88) package, with excellent thermal and mechanical performance for long-term stable operation.
Low gate charge:A maximum gate charge of 160nC at 10V enables fast switching speed and reduces switching losses of the device.
Hot swap:48V backplane hot swap modules in telecommunication equipment, realizing safe plug and play of loads without power off.
Load switch:Main power load switches of industrial server power supplies, achieving efficient on-off control of large current loads.
Soft start:Soft start circuits of high-power industrial frequency converters, reducing startup inrush current and protecting circuit components.
E-fuse:Electronic fuse modules of new energy storage system BMS, providing fast and accurate overcurrent and overvoltage protection.
Telecom systems:Power switching units of 48V supply rail base stations, matching the latest hot-swap controllers for stable power supply.
PSMN2R3-100SSEJ is a high-performance N-Channel MOSFET with the advantages of low on-resistance,high current capacity,optimized SOA and wide temperature adaptability.Its high-reliability package and excellent electrical characteristics make it an ideal choice for hot swap,load switch,soft start and other power switching applications in telecommunication,industrial control and high-power electronic systems, effectively improving the efficiency and reliability of the whole system.