2026/3/10
IRFP4568PBF is a single N-Channel MOSFET developed by Infineon Technologies, belonging to the HEXFET® series. It features high current capacity, low on-resistance and wide operating temperature range, suitable for various high-power switching applications.
Category:Discrete Semiconductor Products,Transistors,FETs, MOSFETs,Single FETs, MOSFETs
Mfr:Infineon Technologies
Series:HEXFET®
Packaging:Tube
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:171A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:5.9mOhm @ 103A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:227 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:10470 pF @ 50 V
Power Dissipation (Max):517W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-247-3
High Current Capacity:It can provide a continuous drain current (Id) of up to 171A at 25°C (Tc), enabling it to handle high-power loads stably and meet the demand of high-current applications.
Low On-Resistance:The maximum drain-source on-resistance (Rds On) is only 5.9mOhm under the condition of 103A current and 10V drive voltage, which effectively reduces conduction loss and improves energy efficiency.
Wide Voltage Range:With a drain-source voltage (Vdss) of 150V and a maximum gate-source voltage (Vgs) of ±30V, it has good voltage tolerance and can adapt to different circuit voltage requirements.
Excellent Ruggedness:It has improved gate, avalanche and dynamic dv/dt ruggedness, as well as enhanced body diode dv/dt and di/dt capability, ensuring reliable operation in harsh working conditions.
Standard Packaging:Adopting TO-247-3 through-hole package and tube packaging, it is easy to install and assemble, and compatible with conventional through-hole mounting processes, facilitating practical application and batch production.
Compliant with Standards:The product meets JEDEC standards and RoHS requirements, with no halogen, ensuring environmental friendliness and high reliability through 100% gate resistance testing.
Synchronous Rectification:Used in high-efficiency synchronous rectification of switching mode power supplies (SMPS), such as the rectifier module of industrial power supplies, which improves power conversion efficiency and reduces energy loss.
Uninterruptible Power Supply:Applied to the power switching part of uninterruptible power supplies (UPS), ensuring stable power supply for equipment such as servers and medical devices when the main power is cut off.
Motor Drive:Suitable for the H-bridge drive circuit of DC motors, servo motors and stepper motors, such as the drive module of industrial conveyor belt motors and electric vehicle auxiliary motors, providing stable and efficient power output.
DC-DC Conversion:Used in high-power DC-DC converters, such as the power conversion module of solar energy storage systems and automotive power supplies, realizing efficient conversion between different DC voltages.
High-Speed Switching:Applied in hard-switched and high-frequency circuits, such as high-frequency inverter circuits for welding equipment and radio frequency power amplifiers, ensuring fast and stable switching performance.
Fuel Cell Control:Used in fuel cell control units (FCCU), responsible for power switching and current regulation, ensuring the stable operation of fuel cell systems in new energy vehicles and industrial equipment.
IRFP4568PBF is a high-performance N-Channel MOSFET with excellent electrical parameters and reliable performance.Its high current,low on-resistance and wide temperature adaptability make it widely used in various high-power switching scenarios,providing stable and efficient solutions for power electronics,industrial control and new energy fields.