SHENZHEN GANGXINLI ELECTRONICS CO.,LTD
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SHENZHEN GANGXINLI ELECTRONICS CO.,LTD
Professional Electronic Component Distributor!
2026/3/20
The 2N7002E-T1-GE3 is a single N-Channel MOSFET produced by Vishay Siliconix, belonging to discrete semiconductor products, which is widely used in low-voltage switching and amplification scenarios due to its compact size and stable performance.
Category:Discrete Semiconductor Products,Transistors,FETs, MOSFETs,Single FETs, MOSFETs
Mfr:Vishay Siliconix
Packaging:Tape & Reel
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:240mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:3Ohm @ 250mA, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:0.6 nC @ 4.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:21 pF @ 5 V
Power Dissipation (Max):350mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:TO-236-3, SC-59, SOT-23-3
Low On-Resistance: It has a maximum Rds On of 3Ohm @ 250mA and 10V, which effectively reduces power loss during operation and improves circuit efficiency.
Wide Voltage Range:The drain-to-source voltage (Vdss) reaches 60V, and the maximum gate-source voltage (Vgs) is ±20V, adapting to various low-voltage application requirements.
Compact Packaging:Adopting TO-236-3, SC-59, SOT-23-3 surface-mount packages, it is small in size and suitable for space-constrained circuit designs.
Broad Temperature Adaptability:The operating temperature ranges from -55°C to 150°C (TJ), ensuring stable performance in extreme temperature environments such as industrial and automotive scenarios.
Low Gate Charge:The maximum gate charge (Qg) is 0.6nC @ 4.5V, enabling fast switching speed and reducing switching delay for high-speed circuit applications.
Low Input Capacitance:With a maximum input capacitance (Ciss) of 21pF @ 5V, it reduces signal interference and improves the responsiveness of the circuit.
LED Dimming:Used in keyboard backlights and indicator lights of consumer electronics (such as mobile phones and tablets), realizing PWM dimming through fast switching characteristics to avoid strobing.
Level Conversion:Applied in the communication link between 3.3V MCU and 5V sensors, matching logic levels to reduce signal distortion and replace traditional resistor voltage division schemes.
Load Switching: Serves as a load switch in battery-powered devices (such as portable Bluetooth speakers), controlling the power on/off of USB or headphone interfaces to reduce standby power consumption.
Small Motor Control: Used in small servo motor control of robots and automation equipment, realizing efficient control of motor speed and direction through PWM signals.
Gate Driver:Acts as a gate driver for power MOSFETs in low-power circuits, providing stable drive voltage and improving the switching performance of the main MOSFET.
Sensor Interface:Used in multi-channel data acquisition modules, acting as an analog switch to switch output signals of different sensors and reduce crosstalk between channels.
The 2N7002E-T1-GE3 is a high-performance N-Channel MOSFET with the advantages of compact size,low power consumption, wide temperature range and fast switching speed.It is widely used in consumer electronics,industrial control and other fields, being a reliable component for low-voltage,low-current electronic circuits.