SHENZHEN GANGXINLI ELECTRONICS CO.,LTD

SHENZHEN GANGXINLI ELECTRONICS CO.,LTD

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2026/3/23

Introduction to ZXMN10A08GTA

.Overview of product

The ZXMN10A08GTA is a single N-Channel MOSFET developed by Diodes Incorporated, belonging to discrete semiconductor products, which features stable performance and is suitable for various low-power switching applications.

 

.Core parameter

Category:Discrete Semiconductor Products,Transistors,FETs, MOSFETs,Single FETs, MOSFETs

Mfr:Diodes Incorporated

Packaging:Tape & Reel

Part Status:Active

FET Type:N-Channel

Technology:MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):100 V

Current - Continuous Drain (Id) @ 25°C:2A (Ta)

Drive Voltage (Max Rds On, Min Rds On):6V, 10V

Rds On (Max) @ Id, Vgs:250mOhm @ 3.2A, 10V

Vgs(th) (Max) @ Id:2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:7.7 nC @ 10 V

Vgs (Max):±20V

Input Capacitance (Ciss) (Max) @ Vds:405 pF @ 50 V

Power Dissipation (Max):2W (Ta)

Operating Temperature:-55°C ~ 150°C (TJ)

Mounting Type:Surface Mount

Package / Case:TO-261-4, TO-261AA

 

.Main characteristics

High Voltage Tolerance:It has a drain-to-source voltage (Vdss) of 100V, which can withstand a certain level of voltage impact and meet the needs of medium-voltage application scenarios, ensuring stable operation under rated voltage conditions.

Stable Current Capacity:The continuous drain current (Id) at 25°C reaches 2A (Ta), providing stable current output, which is suitable for low to medium power load driving and ensures reliable current supply for the circuit.

Low On-Resistance:The maximum Rds On is 250mOhm @ 3.2A, 10V, which effectively reduces power loss during conduction, improves energy efficiency of the device, and reduces heat generation during operation.

Low Gate Charge:The maximum gate charge (Qg) is 7.7nC @ 10V, which reduces the driving power required by the gate, improves the switching speed of the device, and is conducive to the stability of high-frequency switching circuits.

Surface Mount Design:Adopting surface mount type, it is easy to integrate into printed circuit boards (PCBs), saving installation space, facilitating automated assembly, and improving production efficiency.

High Gate Voltage Tolerance:The maximum Vgs is ±20V, which has strong anti-interference ability against gate voltage fluctuations, avoiding device damage caused by excessive gate voltage and enhancing the reliability of the device.

 

.Application field

DC-DC Converters:Used in small DC-DC converter circuits, such as the power conversion module of portable electronic devices, to convert input DC voltage into the required output voltage stably and efficiently.

Load Switches:As a load switch in electronic equipment, it controls the on and off of the load circuit, such as the power switch of a small fan or a low-power sensor, realizing intelligent control of the load.

Battery Protection:Applied in the battery protection circuit of small electronic products, such as the protection module of lithium-ion batteries, to prevent overcurrent and overvoltage of the battery and protect the safety of the battery and equipment.

LED Drivers:Used in low-power LED driver circuits, such as the driver of LED indicator lights or small LED light strips, to provide stable current for LEDs and ensure the normal operation and service life of LEDs.

Signal Amplification:Used in low-power signal amplification circuits, such as the signal amplification module of small sensors, to amplify weak electrical signals and improve the signal transmission effect.

 

.Summary

The ZXMN10A08GTA is a high-performance N-Channel MOSFET with stable parameters, low power loss and wide adaptability, which can meet the needs of various low-power electronic application scenarios and is a reliable choice for discrete semiconductor components.