SHENZHEN GANGXINLI ELECTRONICS CO.,LTD
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SHENZHEN GANGXINLI ELECTRONICS CO.,LTD
Professional Electronic Component Distributor!
2026/3/23
The FDMS6681Z is a single P-Channel MOSFET developed by onsemi, belonging to the PowerTrench® series of discrete semiconductor products. It features high current capacity, low on-resistance and excellent thermal performance, suitable for various high-efficiency switching applications.
Category:Discrete Semiconductor Products,Transistors,FETs, MOSFETs,Single FETs, MOSFETs
Mfr:onsemi
Series:PowerTrench®
Packaging:Tape & Reel
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:21.1A (Ta), 49A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:3.2mOhm @ 22.1A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:241 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:10380 pF @ 15 V
Power Dissipation (Max):2.5W (Ta), 73W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
High Current Capacity:It provides continuous drain current of 21.1A (Ta) and 49A (Tc) at 25°C, which can efficiently drive high-power loads and meet the current demand of high-current application scenarios, ensuring stable operation under heavy load conditions.
Ultra-Low On-Resistance:The maximum Rds On is only 3.2mOhm @ 22.1A, 10V, which significantly reduces power loss during device conduction, improves energy conversion efficiency, and reduces heat generation during long-term operation.
Advanced PowerTrench® Technology:Adopting onsemi's proprietary PowerTrench® technology, the device combines advanced silicon and package design to optimize electrical performance, achieving lower on-resistance and higher reliability compared with traditional MOSFETs.
Excellent Thermal Performance:The maximum power dissipation reaches 2.5W (Ta) and 73W (Tc), with strong heat dissipation capacity, which can effectively avoid device damage caused by overheating and extend the service life of the device.
Wide Gate Voltage Tolerance:The maximum Vgs is ±25V, which has strong anti-interference ability against gate voltage fluctuations, avoiding device failure caused by excessive gate voltage and enhancing the stability of the circuit system.
Compact 8-PowerTDFN Package:Adopting 8-PowerTDFN surface mount package, it has the advantages of small size, good heat conduction and low parasitic parameters, which is convenient for automated assembly and saves PCB space.
Load Switches:Used as a load switch in notebook and server equipment, controlling the on-off of the load circuit to realize intelligent power management and reduce standby power consumption.
Battery Management:Applied in notebook battery pack power management circuits, acting as a charge and discharge control switch to prevent overcurrent and overvoltage, protecting the safety of the battery and equipment.
Power Conversion:Used in low-voltage DC-DC conversion circuits, such as the power conversion module of portable electronic devices, to convert input DC voltage into stable output voltage with high efficiency.
High-Side Switches:Used as a high-side switch in power supply circuits, such as the power control switch of small household appliances, to realize safe and reliable power supply control for the load.
Motor Driving:Applied in low-voltage DC motor drive circuits, such as the drive switch of small fans and miniature motors, providing stable current for motor operation and ensuring smooth operation of the motor.
Power Supply Protection:Used in power supply protection circuits, such as the overcurrent protection module of small power supplies,to cut off the circuit in time when the current is abnormal and protect the core components of the equipment.
The FDMS6681Z is a high-performance P-Channel MOSFET under onsemi’s PowerTrench® series,with the advantages of high current, low on-resistance and excellent thermal performance.It is suitable for various high-efficiency switching and power management scenarios,and is a reliable choice for discrete semiconductor components.