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2026/4/14

Introduction to IRFS4410ZPBF

.Overview of product

The IRFS4410ZPBF is an N-Channel MOSFET belonging to Infineon Technologies’ HEXFET® series,categorized as discrete semiconductor products.It features high current capacity,low on-resistance,and excellent thermal performance,suitable for various high-power switching applications.

 

.Core parameter

Category:Discrete Semiconductor Products,Transistors,FETs,MOSFETs,Single FETs,MOSFETs

Mfr:Infineon Technologies

Series:HEXFET®

Packaging:Tube

Part Status:Discontinued at DigiKey

FET Type:N-Channel

Technology:MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):100 V

Current - Continuous Drain (Id) @ 25°C:97A (Tc)

Drive Voltage (Max Rds On, Min Rds On):10V

Rds On (Max) @ Id, Vgs:9mOhm @ 58A, 10V

Vgs(th) (Max) @ Id:4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:120 nC @ 10 V

Vgs (Max):±20V

Input Capacitance (Ciss) (Max) @ Vds:4820 pF @ 50 V

Power Dissipation (Max):230W (Tc)

Operating Temperature:-55°C ~ 175°C (TJ)

Mounting Type:Surface Mount

Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

 

.Main characteristics

N-Channel Type:Adopts N-Channel MOSFET (Metal Oxide) technology, which has the advantages of voltage control, fast switching speed and stable electrical parameters with temperature changes, making it suitable for high-power switching scenarios.

HEXFET® Technology:Integrates Infineon’s proprietary HEXFET® technology, featuring efficient geometric design that achieves ultra-low on-resistance while ensuring high transconductance, effectively reducing power loss during operation.

High Current Capacity:Boasts a continuous drain current (Id) of 97A at 25°C (Tc), with strong current-carrying capacity, capable of bearing large loads in high-power applications.

Low On-Resistance:The maximum on-resistance (Rds On) is only 9mOhm at 58A and 10V, minimizing conduction loss and improving the energy efficiency of the entire circuit system.

High Power Dissipation:Features a maximum power dissipation of 230W (Tc), with strong heat dissipation capacity, which can quickly dissipate the heat generated during operation and avoid device damage due to overheating.

Convenient Packaging:Adopts TO-263-3 (D2PAK, TO-263AB) surface mount package, which is small in size, easy to install and solder, and helps reduce the overall volume of the circuit board.

 

.Application field

Synchronous Rectification: Used in switching power supplies (SMPS) for high-efficiency synchronous rectification,reducing rectification loss and improving the overall efficiency of power supplies.

Uninterruptible Power Supply: Embedded in uninterruptible power supplies (UPS) to realize high-speed power switching,ensuring stable power output when the main power supply is cut off.

Motor Speed Control: Applied in DC motor speed control circuits (such as industrial fan motors), using PWM signals to adjust the on-off time of the MOSFET and precisely control the motor speed.

Automotive Power Module: Used in automotive power control modules, withstanding high current and high temperature to ensure stable operation of automotive electrical systems.

High-Frequency Inverter:Utilized in small high-frequency inverters,leveraging fast switching performance to convert DC power into AC power efficiently.

Audio Amplifier:Integrated into high-power audio amplifiers, serving as a power output stage to drive speakers, with low on-resistance to ensure clear and undistorted audio output.

 

.Summary

The IRFS4410ZPBF is a high-performance N-Channel MOSFET based on HEXFET® technology,with excellent electrical parameters,rich characteristics and wide application scope.Despite being discontinued at DigiKey,it still provides a reliable and efficient solution for high-power switching,motor control and power supply-related scenarios.