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Ⅰ.Overview of product

BSC040N10NS5ATMA1 is a high-performance N-channel MOSFET produced by Infineon Technologies under the OptiMOS™ series.With high current bearing capacity, low switching loss and excellent thermal stability,it is widely used in various high-efficiency power conversion and industrial control circuits.

Ⅱ.Core parameter

Category:Discrete Semiconductor Products,Transistors,FETs, MOSFETs,Single FETs, MOSFETs

Vgs(th) (Max) @ Id:3.8V @ 95µA

Mfr:Infineon Technologies

Gate Charge (Qg) (Max) @ Vgs:72 nC @ 10 V

Series:OptiMOS™

Vgs (Max):±20V

Packaging:Tape & Reel

Input Capacitance (Ciss) (Max) @ Vds:5300 pF @ 50 V

Part Status:Active

Power Dissipation (Max):2.5W (Ta), 139W (Tc)

FET Type:N-Channel

Operating Temperature:-55°C ~ 150°C (TJ)

Technology:MOSFET (Metal Oxide)

Mounting Type:Surface Mount

Drain to Source Voltage (Vdss):100 V

Current - Continuous Drain (Id) @ 25°C:100A (Tc)

Package / Case:8-PowerTDFN

Drive Voltage (Max Rds On, Min Rds On):6V, 10V

Ⅲ.Main characteristics

N-Channel:This device adopts professional N-channel conduction structure, which supports 100V drain-source withstand voltage and 100A large continuous drain current. It can stably bear high-load power operation and meet the power demand of high-current electronic circuits.

Wide Drive:It features a maximum ±20V gate-source voltage and adapts to 6V and 10V optimal drive voltages. This flexible drive design simplifies peripheral circuit matching and improves the compatibility of different control systems.

Low Loss:The MOSFET has only 72nC maximum gate charge and 5300pF low input capacitance, which effectively reduces high-frequency switching loss. It significantly enhances the overall working efficiency of power conversion circuits during long-term operation.

High Heat Dissipation:It achieves a maximum power dissipation of 139W under case temperature condition, with excellent heat resistance and thermal conductivity. It can maintain stable working state under long-term high-power and high-load operating conditions.

Compact Mount:Equipped with 8-PowerTDFN surface-mount package, the chip features small size and high integration. It is suitable for automated SMT mass production and helps realize compact and lightweight PCB layout design.

Ⅳ.Application field

Power Supply:It is widely used in various switching power supplies and DC-DC converter modules for industrial and consumer electronics. It undertakes core power conversion and voltage regulation work to ensure stable power output of terminal equipment.

Motor Drive:This MOSFET is suitable for low-voltage and medium-power motor PWM drive control systems. It achieves precise current switching and motor speed regulation, supporting stable operation of intelligent drive equipment.

Sync Rectify:It serves as a key synchronous rectification component in high-frequency power conversion circuits. It effectively reduces circuit conduction loss and greatly improves the energy conversion efficiency of high-frequency power modules.

Industrial Control:It is commonly applied in industrial power management equipment and automated control systems. Its ultra-wide temperature adaptability guarantees reliable operation in complex and harsh industrial working environments.

Server Telecom: It fits perfectly for power management and power conversion scenarios of servers and communication base station equipment. It provides efficient and stable power support for high-power IT infrastructure devices.

BMS System:It is an essential device for battery management systems of new energy equipment. It realizes accurate charge and discharge switching and overcurrent protection to ensure safe and stable operation of battery packs.

Ⅴ.Summary

As a high-quality OptiMOS™ series N-channel MOSFET from Infineon, BSC040N10NS5ATMA1 integrates high current,high voltage resistance,low loss and wide temperature adaptability.It boasts superior comprehensive performance and wide application coverage,making it a core preferred device for modern high-efficiency power electronic circuit design.