SHENZHEN GANGXINLI ELECTRONICS CO.,LTD
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SHENZHEN GANGXINLI ELECTRONICS CO.,LTD
Professional Electronic Component Distributor!
2026/5/15
The NTMFSC2D6N08XTWG is an N-channel single MOSFET manufactured by onsemi, belonging to professional discrete semiconductor devices. It features low on-resistance and high current bearing capacity for high-efficiency power switching scenarios.
Category:Discrete Semiconductor Products,Transistors,FETs, MOSFETs,Single FETs, MOSFETs
Vgs(th) (Max) @ Id:3.6V @ 184µA
Mfr:onsemi
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Packaging:Tape & Reel
Vgs (Max):±20V
Part Status:Active
Input Capacitance (Ciss) (Max) @ Vds:3200 pF @ 40 V
FET Type:N-Channel
Power Dissipation (Max):133W (Tc)
Technology:MOSFET (Metal Oxide)
Operating Temperature:-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss):80 V
Mounting Type:Surface Mount
Current - Continuous Drain (Id) @ 25°C:154A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Package / Case:8-PowerVDFN
Rds On (Max) @ Id, Vgs:2.6mOhm @ 37A, 10V
Low Resistance:This MOSFET achieves a maximum on-resistance of only 2.6mOhm under rated conditions, effectively reducing conduction power loss and improving the overall energy efficiency of power circuits.
High Current:It supports a continuous drain current up to 154A, with strong over-current bearing capacity, suitable for high-current power drive and switching working conditions.
High Voltage:Featuring a drain-source withstand voltage of 80V and a maximum gate voltage of ±20V, it provides sufficient voltage margin to avoid breakdown damage in complex circuit environments.
Fast Switching:With low gate charge of 45nC and moderate input capacitance, it realizes fast switching response, reduces switching loss and adapts to high-frequency working scenarios.
High Power Bearing:It can bear a maximum power dissipation of 133W, meeting the high-power output demand of industrial and automotive power circuits.
Compact Packaging:Adopting 8-PowerVDFN surface-mount package and tape & reel packaging, it supports automated production and saves PCB layout space effectively.
Motor Drive:Used in high-current DC brushless motor drive circuits of electric tools, undertaking high-speed switching and current regulation to support stable motor startup and operation.
Power Supply:Applied in 24V/48V industrial switching power supply rectifier and boost modules, reducing power loss and improving power supply conversion efficiency.
BMS System:Deployed in lithium battery management systems of energy storage devices, responsible for battery charge and discharge switching and over-current protection control.
Automotive Electron:Used in automotive interior light drive and small vehicle electrical control modules, adapting to vehicle high-temperature and voltage-fluctuation working conditions.
LED Lighting:Applied in high-power LED street light constant-current drive circuits, achieving stable current output and high-efficiency power switching control.
Inverter Module:Adopted in small household photovoltaic inverter units, completing DC-AC power conversion and high-frequency switching control.
The NTMFSC2D6N08XTWG N-channel MOSFET boasts low on-resistance, high current and high temperature resistance, with excellent comprehensive power performance. It is a reliable discrete semiconductor device widely used in high-efficiency power switching and drive control circuits.