SHENZHEN GANGXINLI ELECTRONICS CO.,LTD
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SHENZHEN GANGXINLI ELECTRONICS CO.,LTD
Professional Electronic Component Distributor!
2026/5/25
IPTC068N20NM6ATM is a high-performance N-channel power MOSFET developed by Infineon Technologies, belonging to the advanced OptiMOS™ 6 series. It features low on-resistance and superior switching performance, designed for high-efficiency power conversion and motor drive systems.
Category:Discrete Semiconductor Products,Transistors,FETs, MOSFETs,Single FETs, MOSFETs
Rds On (Max) @ Id, Vgs:6.25mOhm @ 126A, 15V
Mfr:Infineon Technologies
Vgs(th) (Max) @ Id:4.5V @ 251µA
Series:OptiMOS™ 6
Gate Charge (Qg) (Max) @ Vgs:107 nC @ 10 V
Packaging:Tape & Reel
Vgs (Max):±20V
Part Status:Active
Input Capacitance (Ciss) (Max) @ Vds:7300 pF @ 100 V
FET Type:N-Channel
Power Dissipation (Max):3.8W (Ta), 319W (Tc)
Technology:MOSFET (Metal Oxide)
Operating Temperature:-55°C ~ 175°C (TJ)
Drain to Source Voltage (Vdss):200 V
Mounting Type:Surface Mount
Current - Continuous Drain (Id) @ 25°C:15.2A (Ta), 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V, 15V
Package / Case:16-PowerSOP Module
Low Resistance:This MOSFET achieves an ultra-low on-resistance of 6.25mOhm under rated conditions, effectively reducing conduction power loss and heat generation during operation, significantly improving the energy efficiency of power circuits.
Large Current:It supports a maximum continuous drain current of 140A under cooling conditions, with strong current carrying capacity. It can stably withstand high-current operating conditions and meet the demand of high-power circuit load drive.
High Withstand:Featuring a 200V drain-source withstand voltage and ±20V gate-source maximum voltage, it has excellent voltage resistance and circuit anti-interference ability, avoiding breakdown damage caused by voltage surge.
Fast Switching:Equipped with low gate charge and optimized input capacitance parameters, it delivers fast switching speed and low switching loss. It is suitable for high-frequency power conversion scenarios and improves system response efficiency.
High Power:It provides a maximum power dissipation of 319W under cooling conditions, with strong power processing capability. It can adapt to high-power operating scenarios and ensure stable and continuous output of the system.
Compact Package:Adopting 16-PowerSOP surface-mount module packaging and tape-and-reel delivery,it saves PCB layout space, facilitates automated production, and realizes miniaturization of high-power equipment.
Motor Drive:Applied to drive circuits of electric scooters and micro electric vehicle hub motors, serving as a core switching component to control motor forward and reverse rotation and speed regulation, ensuring stable and low-loss motor operation.
Power Supply:Used in high-frequency switching circuits of industrial DC-DC power converters and communication power supplies, realizing efficient voltage conversion and current regulation to reduce power consumption of power supply equipment.
Battery Manage:Deployed in battery protection and equalization circuits of electric vehicle battery management systems (BMS), controlling battery charging and discharging switches to prevent overcurrent and overvoltage damage to battery cells.
Industrial Equipment:Applied to drive modules of electric forklift hydraulic pumps and industrial small servo motors, adapting to high-current and high-load industrial working conditions to ensure stable operation of mechanical equipment.
Solar System:Used in DC side switching and maximum power point tracking (MPPT) circuits of small solar photovoltaic power generation systems, optimizing energy conversion efficiency and improving solar power utilization.
IPTC068N20NM6ATM is a high-efficiency and high-reliability N-channel MOSFET with low on-resistance,large current capacity and wide temperature adaptability.It is an ideal power switching device for high-power and high-frequency electronic systems in industrial and new energy fields.