SHENZHEN GANGXINLI ELECTRONICS CO.,LTD
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SHENZHEN GANGXINLI ELECTRONICS CO.,LTD
Professional Electronic Component Distributor!
2026/7/1
DMP1200UFR4-7 is a P-channel single MOSFET manufactured by Diodes Incorporated with stable low-voltage conduction performance. It adopts surface-mount XFDFN package and is widely used in small-current switching and power management circuits.
Category:Discrete Semiconductor Products,Transistors,FETs, MOSFETs,Single FETs, MOSFETs
Vgs(th) (Max) @ Id:1V @ 250µA
Mfr:Diodes Incorporated
Gate Charge (Qg) (Max) @ Vgs:5.8 nC @ 4.5 V
Packaging:Tape & Reel
Vgs (Max):±8V
Part Status:Active
Input Capacitance (Ciss) (Max) @ Vds:514 pF @ 5 V
FET Type:P-Channel
Power Dissipation (Max):480mW (Ta)
Technology:MOSFET (Metal Oxide)
Operating Temperature:-55°C ~ 150°C (TJ)
Drain to Source Voltage (Vdss):12 V
Mounting Type:Surface Mount
Current - Continuous Drain (Id) @ 25°C:2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Package / Case:3-XFDFN
Rds On (Max) @ Id, Vgs:100mOhm @ 2A, 4.5V
P-Channel Design:This device is a standard P-channel metal oxide semiconductor field-effect transistor. It is suitable for negative voltage switching and high-side power control circuit scenarios.
Low On-Resistance:It features a maximum on-resistance of 100mOhm under 2A and 4.5V working conditions. It effectively reduces conduction loss and heat generation during current transmission.
Stable Threshold:The maximum gate threshold voltage is controlled at 1V under 250µA current. It supports low-voltage drive and realizes sensitive and reliable switching action.
Low Gate Charge:It has a maximum gate charge of only 5.8nC at 4.5V drive voltage. The small gate charge enables fast switching speed and improves circuit response efficiency.
Mini SMD Package:Adopting compact 3-XFDFN surface-mount package. It saves PCB layout space and supports miniaturization of portable electronic equipment.
Low Input Capacitance:The maximum input capacitance is 514pF at 5V voltage. It reduces high-frequency switching delay and optimizes high-speed circuit working performance.
Power Switching:Used for high-side power switch control of lithium battery power supply boards in Bluetooth headsets. It realizes accurate power turn-on and turn-off to prevent standby power consumption.
Battery Protection:Applied in over-discharge protection circuits of small-capacity lithium batteries for smart wearables. It quickly cuts off the circuit to avoid battery damage caused by excessive discharge.
Load Control:Serving as current switching control for small-power LED indicator circuits on main control boards. It stably controls LED on-off and avoids current surge damage.
DC Circuit Control:Used for voltage domain switching of low-power DC-DC step-up and step-down modules. It ensures stable voltage conversion and improves power supply efficiency.
Interface Protection:Applied in anti-reverse connection protection circuits of USB miniature charging interfaces. It effectively block reverse current and protect terminal charging circuits.
Signal Switching:Used for gating control of low-frequency signal circuits of smart sensor modules. It ensures stable signal switching and avoids signal interference.
DMP1200UFR4-7 is a high-performance P-channel MOSFET with low loss, fast switching and wide temperature adaptability. It is a reliable core switching component widely applicable to various low-power consumer electronic power management circuits.