SHENZHEN GANGXINLI ELECTRONICS CO.,LTD
Professional Electronic Component Distributor!
Language
SHENZHEN GANGXINLI ELECTRONICS CO.,LTD
Professional Electronic Component Distributor!
2026/7/13
The SI7431DP-T1-GE3 is a high-performance P-channel MOSFET manufactured by Vishay Siliconix based on advanced TrenchFET® technology. It features low on-resistance and stable electrical performance, suitable for various precision power switching and circuit control scenarios.
Category:Discrete Semiconductor Products,Transistors,FETs, MOSFETs,Single FETs, MOSFETs
Rds On (Max) @ Id, Vgs:174mOhm @ 3.8A, 10V
Mfr:Vishay Siliconix
Vgs(th) (Max) @ Id:4V @ 250µA
Series:TrenchFET®
Gate Charge (Qg) (Max) @ Vgs:135 nC @ 10 V
Packaging:Tape & Reel
Vgs (Max):±20V
Part Status:Active
Power Dissipation (Max):1.9W (Ta)
FET Type:P-Channel
Operating Temperature:-55°C ~ 150°C (TJ)
Technology:MOSFET (Metal Oxide)
Mounting Type:Surface Mount
Drain to Source Voltage (Vdss):200 V
Current - Continuous Drain (Id) @ 25°C:2.2A (Ta)
Package / Case:PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Low On-resistance:The device achieves a maximum on-resistance of 174mOhm under rated working conditions. It effectively reduces conduction loss and heat generation during circuit operation to improve power utilization efficiency.
High Voltage Resistance:It supports a 200V drain-source withstand voltage and a ±20V maximum gate-source voltage. The excellent voltage resistance ensures safe and stable operation in medium-voltage power circuits.
Stable Conduction:It has a low maximum threshold voltage of 4V at 250µA, enabling sensitive and reliable turn-on control. It can respond quickly to drive signals and ensure accurate circuit switching actions.
Low Gate Charge:The maximum gate charge is only 135nC under 10V drive voltage. The low gate charge characteristic reduces switching loss and improves the overall switching speed of the device.
Moderate Power Bearing:It provides a maximum power dissipation of 1.9W at ambient temperature. It meets the power load demands of most medium and small power switching circuits.
Compact Packaging:Adopting PowerPAK® SO-8 surface mount package and tape-and-reel packaging.The miniaturized structure saves board space and is compatible with automated mass production.
Power Switching:Applied to secondary side power switching of low-power switching power supplies. It efficiently controls the on-off of power circuits and reduces overall power consumption of power supply equipment.
Battery Management:Used for charge and discharge control switches of lithium battery packs in portable devices. It precisely controls battery current transmission and protects battery safety during operation.
Motor Drive:Deployed in small DC motor forward and reverse control circuits. It provides stable voltage and current switching to ensure smooth and reliable motor operation.
LED Lighting:Applied to constant-current drive switching circuits of high-power LED lamps. It stabilizes the working state of LED circuits and prolongs the service life of lighting equipment.
Industrial Control:Used for signal and power gating of small industrial sensor modules. It isolates and controls circuit power to ensure stable operation of precision sensing equipment.
Consumer Electronics:Applied to power circuit switching of household appliances and wearable electronic devices. It adapts to low-power and high-stability working demands of consumer electronic products.
The SI7431DP-T1-GE3 is a high-quality P-channel TrenchFET® MOSFET with low loss, high stability and wide temperature adaptability. It is a cost-effective discrete semiconductor device, widely suitable for various medium and small power switching and control circuit scenarios.